We report an alternative, high-yielding synthesis for the known compound 2,4,6-tris(2′,4′-difluoro-[1,1′-biphenyl]-4-yl)-1,3,5-triazine (tris-(dFB)Tz). The energy of the lowest unoccupied molecular orbital (ELUMO) for tris-(dFB)Tz is estimated to be −3.5 eV from electrochemical measurements. The deep ELUMO of tris-(dFB)Tz affords a material with excellent electron acceptor characteristics for use in n-doped electron transport layers. Tris-(dFB)Tz shows a four order of magnitude increase in the number of carriers on doping with 8 wt. % Cs2CO3. Enhanced electron injection was also observed on doping with Cs2CO3, which eliminated the necessity for a separate LiF electron injection layer. Blue phosphorescent organic light-emitting devices (OLEDs) were fabricated using n-doped tris-(dFB)Tz electron transport layers. OLEDs with thick (700-Å) Cs2CO3-doped tris-(dFB)Tz electron transport layers had lower operating voltages than OLEDS with an undoped electron transport layer of bis(diphenylphosphoryl)dibenzothiophene (PO15), which has previously been used in low-voltage, high-efficiency OLEDs. The tris-(dFB)Tz results indicate that aromatic substituted triazines may be promising materials for use as electron acceptors in n-doped organic electronic systems.