Special Section on Organic Light-Emitting Materials and Devices

Numerical modeling of silicon evanescent lasers

[+] Author Affiliations
Alexey G. Rzhanov

M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory, Moscow 119991, Russia

Stanislav E. Grigas

M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory, Moscow 119991, Russia

J. Photon. Energy. 1(1), 011010 (January 28, 2011). doi:10.1117/1.3523319
History: Received July 28, 2010; Revised September 25, 2010; Accepted October 15, 2010; Published January 28, 2011; Online January 28, 2011
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A numerical self-consisted dynamic model of a silicon evanescent laser is presented. This model allows us to calculate the laser output power as a function of drive current and mode composition. Obtained results are in good agreement with published experimental data. Dynamic processes in silicon evanescent lasers are also investigated, and self-modulation processes are observed.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Alexey G. Rzhanov and Stanislav E. Grigas
"Numerical modeling of silicon evanescent lasers", J. Photon. Energy. 1(1), 011010 (January 28, 2011). ; http://dx.doi.org/10.1117/1.3523319


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