Solar Fuel and Solar Hydrogen

Influence of point defects on the performance of InVO4 photoanodes

[+] Author Affiliations
Roel van de Krol

Delft University of Technology, Faculty of Applied Sciences, Department of Chemical Engineering/ Materials for Energy Conversion and Storage, P.O. Box 5045, 2600 GA Delft, The Netherlands

Julie Ségalini

Delft University of Technology, Faculty of Applied Sciences, Department of Chemical Engineering/ Materials for Energy Conversion and Storage, P.O. Box 5045, 2600 GA Delft, The Netherlands

Cristina S. Enache

Delft University of Technology, Faculty of Applied Sciences, Department of Chemical Engineering/ Materials for Energy Conversion and Storage, P.O. Box 5045, 2600 GA Delft, The Netherlands

J. Photon. Energy. 1(1), 016001 (March 17, 2011). doi:10.1117/1.3564926
History: Received September 29, 2010; Revised January 17, 2011; Accepted February 21, 2011; Published March 17, 2011; Online March 17, 2011
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The properties of thin film InVO4 photoanodes for water splitting have been studied. Compact films of InVO4 were prepared by spray pyrolysis and are found to be stable between pH 3 and 11. Although the indirect bandgap is 3.2 eV, a modest amount of visible light absorption is observed. The origin of this absorption is attributed to the presence of deep donor states at ∼0.7 eV below the conduction band. These donor states presumably correspond to oxygen vacancies, which form as a result of small but unavoidable deviations of In:V from the ideal 1:1 stoichiometry during the wet-chemical synthesis process. Shallow donors are absent in this material, in contrast to what is normally observed for metal oxides. The deep donor model explains the much stronger visible light absorption of powders compared to thin films. The defect chemical reactions that lead to the formation of the deep donors are shown, and are supported by photoluminescence data.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Roel van de Krol ; Julie Ségalini and Cristina S. Enache
"Influence of point defects on the performance of InVO4 photoanodes", J. Photon. Energy. 1(1), 016001 (March 17, 2011). ; http://dx.doi.org/10.1117/1.3564926


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