Materials and Device Physics, and Modeling

Cu(In,Ga)Se2 thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step

[+] Author Affiliations
Veronika Haug, Ines Klugius, Theresa Magorian Friedlmeier, Aina Quintilla, Erik Ahlswede

Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestraße 6, D-70565 Stuttgart, Germany

J. Photon. Energy. 1(1), 018002 (November 08, 2011). doi:10.1117/1.3659500
History: Received June 15, 2011; Revised August 25, 2011; Accepted October 20, 2011; Published November 08, 2011; Online November 08, 2011
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High-efficiency thin-film solar cells based on Cu(In,Ga)Se2 are often formed by depositing precursor films and using a subsequent selenization step. We demonstrate a simple and cost-efficient approach simplifying both process steps by using a ternary Cu-In-Ga alloy target for sputter deposition of the precursor layer and by using a simple nonvacuum selenization reaction based on elemental selenium. In this contribution we examine in detail the characteristics of the precursor layers. The sputter growth is governed by a segregation of In-rich islands on top of a closed Cu-rich base. With optimized layers we could achieve conversion efficiencies well above 13% without the use of antireflective coating or metallic grids. The influence of the selenization duration on morphology and performance is discussed.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Veronika Haug ; Ines Klugius ; Theresa Magorian Friedlmeier ; Aina Quintilla and Erik Ahlswede
"Cu(In,Ga)Se2 thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step", J. Photon. Energy. 1(1), 018002 (November 08, 2011). ; http://dx.doi.org/10.1117/1.3659500


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