Materials Synthesis, Deposition, and Processing

Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications

[+] Author Affiliations
Yong Huang, Jae-Hyun Ryou

Georgia Institute of Technology, Center for Compound Semiconductors, Atlanta, Georgia 30332

Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, Georgia 30332

Andrew Melton, Muhammad Jamil

Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, Georgia 30332

Balakrishnam Jampana

University of Delaware, Department of Materials Science and Engineering, Newark, Delaware 19716

Russell D. Dupuis

Georgia Institute of Technology, Center for Compound Semiconductors, Atlanta, Georgia 30332

Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, Georgia 30332

Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, Georgia 30332

Ian T. Ferguson

Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, Georgia 30332

The University of North Carolina at Charlotte, Department of Electrical and Computer Engineering, Charlotte, North Carolina 28223

J. Photon. Energy. 2(1), 028501 (Feb 23, 2012). doi:10.1117/1.JPE.2.028501
History: Received May 10, 2011; Revised September 21, 2011; Accepted December 8, 2011
Text Size: A A A

Abstract.  We report on the structural, morphological, and optical qualities of thick InxGa1xN heteroepitaxial layers grown by metalorganic chemical vapor deposition with various growth conditions for applications in wide-bandgap solar cells. The indium incorporation depending on the growth temperature and indium precursor flow rate and the crystalline and optical qualities of InGaN layers depending on indium mole fraction were investigated. The InGaN layers with high structural and optical qualities were obtained for indium mole fractions, xIn<0.18, whereas significant degradation of material qualities was observed for xIn>0.18, which is associated with the change of growth mode induced by reduced growth temperature. Stokes shift and microscopic and macroscopic phase separations were also studied. Two types of additional phases besides InGaN matrix, i.e., indium-rich InGaN microstructures and macroscopic InGaN domains, were demonstrated to be suppressed by controlling surface adatom mobility and growth rates.

Figures in this Article
© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Yong Huang ; Andrew Melton ; Balakrishnam Jampana ; Muhammad Jamil ; Jae-Hyun Ryou, et al.
"Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications", J. Photon. Energy. 2(1), 028501 (Feb 23, 2012). ; http://dx.doi.org/10.1117/1.JPE.2.028501


Tables

Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.