Process optimization of doping conditions for (100) P-type monocrystalline silicon solar cell using response surface methodology

Khuram Ali; Sohail A. Khan; Mohd Zubir Mat Jafri

doi:10.1117/1.JPE.3.032099

22 October 2013 Process optimization of doping conditions for (100) P-type monocrystalline silicon solar cell using response surface methodology

Khuram Ali, Sohail A. Khan, Mohd Zubir Mat Jafri

Author Affiliations +

Journal of Photonics for Energy, Vol. 3, Issue 1, 032099 (October 2013). https://doi.org/10.1117/1.JPE.3.032099

Abstract

The effect of time and temperature on the sheet resistance (R _S ) and carrier concentration (N _A ) of (100) P-type monocrystalline Si was investigated. Phosphorus-doped n ⁺ -emitters were fabricated through solid-source doping in a quartz tube furnace. The process variable values for 13 runs were proposed by response surface methodology (RSM). The optimized values for time and temperature predicted by RSM were 56 min and 1045°C, respectively, for a sheet resistance of 41.7 Ω/□ and a carrier concentration of 3.7E18 cm ⁻³ . Optimization-based fabrication was found to be in close agreement with the optimized values. Parameter optimization using RSM could be valuable in achieving predetermined dopant variables in optoelectronic devices as well as in reducing the surface recombinations and series resistance of highly efficient Si solar cells.

Citation Download Citation

Khuram Ali, Sohail A. Khan, and Mohd Zubir Mat Jafri "Process optimization of doping conditions for (100) P-type monocrystalline silicon solar cell using response surface methodology," Journal of Photonics for Energy 3(1), 032099 (22 October 2013). https://doi.org/10.1117/1.JPE.3.032099

Published: 22 October 2013

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