Materials and Device Physics, and Modeling

Process optimization of doping conditions for (100) P-type monocrystalline silicon solar cell using response surface methodology

[+] Author Affiliations
Khuram Ali

Universiti Sains Malaysia, School of Physics, Nano-Optoelectronics Research and Technology Laboratory, Penang 11800, Malaysia

Sohail A. Khan

Universiti Sains Malaysia, School of Physics, Nano-Optoelectronics Research and Technology Laboratory, Penang 11800, Malaysia

Mohd Zubir Mat Jafri

Universiti Sains Malaysia, School of Physics, Nano-Optoelectronics Research and Technology Laboratory, Penang 11800, Malaysia

J. Photon. Energy. 3(1), 032099 (Oct 22, 2013). doi:10.1117/1.JPE.3.032099
History: Received June 6, 2013; Revised September 16, 2013; Accepted September 30, 2013
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Abstract.  The effect of time and temperature on the sheet resistance (RS) and carrier concentration (NA) of (100) P-type monocrystalline Si was investigated. Phosphorus-doped n+-emitters were fabricated through solid-source doping in a quartz tube furnace. The process variable values for 13 runs were proposed by response surface methodology (RSM). The optimized values for time and temperature predicted by RSM were 56 min and 1045°C, respectively, for a sheet resistance of 41.7Ω/ and a carrier concentration of 3.7E18cm3. Optimization-based fabrication was found to be in close agreement with the optimized values. Parameter optimization using RSM could be valuable in achieving predetermined dopant variables in optoelectronic devices as well as in reducing the surface recombinations and series resistance of highly efficient Si solar cells.

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© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

Khuram Ali ; Sohail A. Khan and Mohd Zubir Mat Jafri
"Process optimization of doping conditions for (100) P-type monocrystalline silicon solar cell using response surface methodology", J. Photon. Energy. 3(1), 032099 (Oct 22, 2013). ; http://dx.doi.org/10.1117/1.JPE.3.032099


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