Photovoltaic Materials, Devices, and Technologies

Optical and photovoltaic properties of zinc sulfide quantum dots fabricated by spin-assisted successive ion layer adsorption and reaction technique

[+] Author Affiliations
Masood Mehrabian

Amirkabir University of Technology, Department of Physics, Hafez Street, Tehran 15875-4413, Iran

Kavoos Mirabbaszadeh

Amirkabir University of Technology, Department of Physics, Hafez Street, Tehran 15875-4413, Iran

Hossein Afarideh

Amirkabir University of Technology, Department of Physics, Hafez Street, Tehran 15875-4413, Iran

Yoon Sang Kim

Korea University of Technology and Education, Department of Computer Science and Engineering, (330-708) 1600 Chungjeolno, Byungchun, Cheonan, Chungnam, Republic of Korea

J. Photon. Energy. 4(1), 043093 (Jul 18, 2014). doi:10.1117/1.JPE.4.043093
History: Received March 1, 2014; Revised April 5, 2014; Accepted April 11, 2014
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Abstract.  Zinc sulfide (ZnS) quantum dots were prepared by successive ion layer adsorption and reaction (SILAR) technique based on spin coating (spin-SILAR). The effect of the number of SILAR cycle (n) on optical and photovoltaic properties was studied. An optimized ZnS quantum dot sensitized solar cell demonstrated maximum power conversion efficiency of 3.58% with a short-circuit current of 10.53mA/cm2 and an open-circuit voltage of 0.58 V under one sun illumination (AM1.5). The results showed that a ZnS QD layer with n=10 (thickness 80nm) can be used as a highly efficient sensitizer for solar cells. The ZnS QD layer acts as a light absorber and a recombination blocking layer in the ITO/ZnO film/ZnS QD/P3HT/PCBM/Ag structure.

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© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Masood Mehrabian ; Kavoos Mirabbaszadeh ; Hossein Afarideh and Yoon Sang Kim
"Optical and photovoltaic properties of zinc sulfide quantum dots fabricated by spin-assisted successive ion layer adsorption and reaction technique", J. Photon. Energy. 4(1), 043093 (Jul 18, 2014). ; http://dx.doi.org/10.1117/1.JPE.4.043093


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