Materials and Device Modeling and Simulation

Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics

[+] Author Affiliations
Hamid Heidarzadeh

University of Tabriz, Photonic and Nanocrystal Research Lab. (PNRL), Faculty of Electrical and Computer Engineering, Tabriz 5166614761, Iran

Ali Rostami

University of Tabriz, Photonic and Nanocrystal Research Lab. (PNRL), Faculty of Electrical and Computer Engineering, Tabriz 5166614761, Iran

University of Tabriz, School of Engineering-Emerging Technologies, Tabriz 5166614761, Iran

Mahboubeh Dolatyari

University of Tabriz, Photonic and Nanocrystal Research Lab. (PNRL), Faculty of Electrical and Computer Engineering, Tabriz 5166614761, Iran

Ghasem Rostami

University of Tabriz, School of Engineering-Emerging Technologies, Tabriz 5166614761, Iran

J. Photon. Energy. 4(1), 042098 (Oct 08, 2014). doi:10.1117/1.JPE.4.042098
History: Received March 31, 2014; Revised June 30, 2014; Accepted July 2, 2014
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Abstract.  Optimal efficiency calculations for 3C-SiC- and 6H-SiC-based intermediate band (IB) solar cells are presented. Using detailed balance methods, it is shown that the conversion efficiency of IB SiC-based solar cells is very sensitive to IB position, type of spectrum, and concentration of the incident light. Under a 1000 suns concentration and AM1.5 spectrum irradiation, a maximum efficiency of 55.9% is theoretically achieved for 3C-SiC with the IB located at 0.79 eV up to the valence band of the host material. Under the same conditions, a theoretical maximum efficiency of 49.7% is achieved with an IB located at 0.84 eV below the conduction band of the 6H-SiC. Based on the obtained theoretical results, the formation of an isolated IB in the appropriate position is demonstrated for Ni-doped 3C-SiC and Mn-doped 6H-SiC using the density function theory method which leads to an enhancement in the absorption coefficient in the ranges of the solar spectrum.

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© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Hamid Heidarzadeh ; Ali Rostami ; Mahboubeh Dolatyari and Ghasem Rostami
"Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics", J. Photon. Energy. 4(1), 042098 (Oct 08, 2014). ; http://dx.doi.org/10.1117/1.JPE.4.042098


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