Special Section on Solid-State Lighting: Photonics and Technologies

Effects of last barrier thickness on the hot–cold factor of GaN-based light-emitting diodes

[+] Author Affiliations
Qiuping Luan

Shandong College of Electronic Technology, Department of Electronic Engineering, Jinan, Shandong 250014, China

Kin-Tak Lam

Fuzhou University, Institute of Creative Industries Research, Jimei, Xiamen, Fujian 361024, China

Shoou-Jinn Chang

National Cheng Kung University, Advanced Optoelectronic Technology Center, Institute of Microelectronics and Department of Electrical Engineering, Tainan 70101, Taiwan

J. Photon. Energy. 5(1), 057602 (Feb 19, 2015). doi:10.1117/1.JPE.5.057602
History: Received October 23, 2014; Accepted December 1, 2014
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Abstract.  The study of thermal properties for GaN-based light-emitting diodes (LEDs) with various last barrier thicknesses was reported. It was found that the LED output power decreased as we increased the thickness of the last barrier. It was also found that the LED output powers decrease with the increase of temperature for the LEDs with 12-, 24-, and 48-nm-thick last barriers. However, it was found that the LED output power increases with the increase of temperature for the LED with a 72-nm-thick last barrier due to the fact that more holes could enter the multiquantum well active region at elevated temperatures. Furthermore, it was found that the output power decreased by 0.15%/°C, 0.15%/°C, and 0.11%/°C for the LEDs with 12-, 24-, and 48-nm-thick last barriers, respectively, but increased by 0.09%/°C for the LED with a 72-nm-thick last barrier.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Qiuping Luan ; Kin-Tak Lam and Shoou-Jinn Chang
"Effects of last barrier thickness on the hot–cold factor of GaN-based light-emitting diodes", J. Photon. Energy. 5(1), 057602 (Feb 19, 2015). ; http://dx.doi.org/10.1117/1.JPE.5.057602


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