Special Section on Solid-State Lighting: Photonics and Technologies

Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses

[+] Author Affiliations
Ying-Wen Lin, Chun-Kai Wang, Yu-Zung Chiou

Southern Taiwan University of Science and Technology, Department of Electronic Engineering, No. 1, Nan-Tai Street, Yung-Kang District, Tainan City 71005, Taiwan

Hung-Ming Chang, Shoou-Jinn Chang

National Cheng Kung University, Institute of Microelectronics, Department of Electrical Engineering, No. 1, Daxue Road, East District, Tainan City 701, Taiwan

J. Photon. Energy. 5(1), 057612 (Jul 09, 2015). doi:10.1117/1.JPE.5.057612
History: Received February 7, 2015; Accepted June 9, 2015
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Abstract.  Optical and electrical properties of gallium nitride (GaN)-based blue light-emitting diodes (LEDs) with various indium gallium nitride (InGaN) quantum well (QW) thicknesses were investigated. As the QW thickness was increased, the light output power of GaN-based LEDs also increased. The increase can be attributed to the increase in the carrier radiative recombination rate in the active region. However, the turn-on voltages of these fabricated LEDs are different. This was attributed to the increase in the polarization field with increasing QW thickness. In regard to the hot/cold factor, LEDs with a thicker QW achieved better performance at a low-injection current owing to the lower defect density. The hot/cold factor at a high-injection current would be mainly influenced by the efficiency droop mechanism.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Ying-Wen Lin ; Chun-Kai Wang ; Yu-Zung Chiou ; Hung-Ming Chang and Shoou-Jinn Chang
"Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses", J. Photon. Energy. 5(1), 057612 (Jul 09, 2015). ; http://dx.doi.org/10.1117/1.JPE.5.057612


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