Photovoltaic Materials, Devices, and Technologies

Parameterization of a-Si crystallization by continuous-wave green laser irradiation: from single spot to large area

[+] Author Affiliations
David Munoz-Martin, Yu Chen, Miguel Morales, Juan José García-Ballesteros, Carlos Molpeceres

Universidad Politécnica de Madrid, Centro Láser, Alan Turing 1, 28038 Madrid, Spain

Julio Cárabe, José Javier Gandía, José Domingo Santos

CIEMAT, Av. Complutense 40, 28040 Madrid, Spain

Maria Losurdo, Giovanni Bruno

CNR-IMIP, Via Orabona 4, 70125 Bari, Italy

J. Photon. Energy. 5(1), 053086 (Nov 24, 2015). doi:10.1117/1.JPE.5.053086
History: Received July 14, 2015; Accepted October 26, 2015
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Abstract.  An advantage of laser crystallization over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. In the present work, thin-film amorphous-silicon samples were irradiated with a continuous-wave green laser source. Laser irradiated spots were produced by using different laser powers and irradiation times. Micro-Raman spectroscopy was used to study the crystallization induced on the irradiated surface. Both laser peak power density and irradiation time are identified as key variables in the crystallization process, but within the parametric window considered, the enhancement of the crystalline factor, is more sensitive to the power density than to the irradiation time. The optimum parameters are then used for crystallizing a large sample area by means of overlapped laser scanned lines. Ellipsometric data experimentally show that the whole volume of a micron-thick sample is crystallized.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

David Munoz-Martin ; Yu Chen ; Miguel Morales ; Juan José García-Ballesteros ; Julio Cárabe, et al.
"Parameterization of a-Si crystallization by continuous-wave green laser irradiation: from single spot to large area", J. Photon. Energy. 5(1), 053086 (Nov 24, 2015). ; http://dx.doi.org/10.1117/1.JPE.5.053086


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