Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

Adaikalam Kathalingam; Hyun-Seok Kim; Hyung-Moo Park; Santiyagu Valanarasu; Thaiyan Mahalingam

doi:10.1117/1.JPE.5.053085

9 December 2015 Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

Adaikalam Kathalingam, Hyun-Seok Kim, Hyung-Moo Park, Santiyagu Valanarasu, Thaiyan Mahalingam

Author Affiliations +

Journal of Photonics for Energy, Vol. 5, Issue 1, 053085 (December 2015). https://doi.org/10.1117/1.JPE.5.053085

Abstract

Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I−V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (V_oc) of 0.3 V and short-circuit current (I_sc) of 70×10−⁶ A under ultraviolet light excitation.

Citation Download Citation

Adaikalam Kathalingam, Hyun-Seok Kim, Hyung-Moo Park, Santiyagu Valanarasu, and Thaiyan Mahalingam "Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film," Journal of Photonics for Energy 5(1), 053085 (9 December 2015). https://doi.org/10.1117/1.JPE.5.053085

Published: 9 December 2015

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available