A two-step process is used to grow crystalline silicon (c-Si) on glass at low temperatures. In the first step, nanocrystalline seed layers are formed at temperatures in the range of 230 to 400°C by either metal-induced crystallization or by direct deposition on heated substrates. In the second step, c-Si is grown on the seed layer by steady-state liquid phase epitaxy at a temperature range of 580 to 710°C. Microcrystalline Si layers with grain sizes of up to several tens of micrometers are grown from In and Sn solutions. Three-dimensional simulations of heat and convective flow in the crucible have been conducted and give valuable insights into the growth process. The experimental results are promising with regard to the designated use of the material in photovoltaics.