Light-Emitting Materials, Devices, and Technologies

Growth of hierarchical GaN nanowires for optoelectronic device applications

[+] Author Affiliations
Rishabh Raj, Veeramuthu Vignesh, Rangaswamy Navamathavan

VIT University Chennai, Division of Physics, School of Advanced Sciences, Vandalur—Kelambakkam Road, Chennai 600 127, India

Yong-Ho Ra

McGill University, Department of Electrical and Computer Engineering, 3480 University Street, Montreal, Quebec H3A 0E9, Canada

Rajkumar Nirmala

Chonbuk National University, Department of Organic Materials and Fiber Engineering, 567 Baekje-daero, Deokjin-gu, Jeollabuk-do, Jeonju 561 756, Republic of Korea

Cheul-Ro Lee

Chonbuk National University, School of Advanced Materials Engineering, Semiconductor Materials Process Laboratory, 567 Baekje-daero, Deokjin-gu, Jeollabuk-do, Jeonju 561-756, Republic of Korea

J. Photon. Energy. 7(1), 016001 (Jan 11, 2017). doi:10.1117/1.JPE.7.016001
History: Received June 27, 2016; Accepted December 19, 2016
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Abstract.  Gallium nitride nanostructures have been receiving considerable attention as building blocks for nanophotonic technologies due to their unique high aspect ratios, promising the realization of photonic and biological nanodevices such as blue light emitting diodes (LEDs), short-wavelength ultraviolet nanolasers, and nanofluidic biochemical sensors. We report on the growth of hierarchical GaN nanowires (NWs) by dynamically adjusting the growth parameters using the pulsed flow metal-organic chemical vapor deposition technique. We carried out two step growth processes to grow hierarchical GaN NWs. In the first step, the GaN NWs were grown at 950°C, and in the second, we suitably decreased the growth temperature to 630°C and 710°C to grow the hierarchical structures. The surface morphology and optical characterization of the grown GaN NWs were studied by field-emission scanning electron microscopy, high-resolution transmission electron microscopy, photoluminescence, and cathodoluminescence measurements. These kinds of hierarchical GaN NWs are promising for allowing flat band quantum structures that are shown to improve the efficiency of LEDs.

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© 2017 Society of Photo-Optical Instrumentation Engineers

Citation

Rishabh Raj ; Veeramuthu Vignesh ; Yong-Ho Ra ; Rajkumar Nirmala ; Cheul-Ro Lee, et al.
"Growth of hierarchical GaN nanowires for optoelectronic device applications", J. Photon. Energy. 7(1), 016001 (Jan 11, 2017). ; http://dx.doi.org/10.1117/1.JPE.7.016001


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