Simulation of an inverted perovskite solar cell with inorganic electron and hole transfer layers

Mohamad Goudarzi; Mehdi Banihashemi

doi:10.1117/1.JPE.7.022001

4 April 2017 Simulation of an inverted perovskite solar cell with inorganic electron and hole transfer layers

Mohamad Goudarzi, Mehdi Banihashemi

Author Affiliations +

Journal of Photonics for Energy, Vol. 7, Issue 2, 022001 (April 2017). https://doi.org/10.1117/1.JPE.7.022001

Abstract

We use solar cell capacitance simulator-1D to simulate a fabricated inverted perovskite solar cell. The perovskite solar cell employs solution-processed inorganic hole and electron transfer layers. According to our simulations, surface defect densities at the interfaces of the perovskite active layer and inorganic hole/electron transfer materials in solution-based fabrication method are two orders of magnitude greater than that in the vapor deposition fabrication method. Increase of the surface defect densities reduces the circuit current, fill factor, and power conversion efficiency.

Citation Download Citation

Mohamad Goudarzi and Mehdi Banihashemi "Simulation of an inverted perovskite solar cell with inorganic electron and hole transfer layers," Journal of Photonics for Energy 7(2), 022001 (4 April 2017). https://doi.org/10.1117/1.JPE.7.022001

Received: 19 January 2017; Accepted: 16 March 2017; Published: 4 April 2017

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available