Special Series on Tandem Junction Solar Cells

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

[+] Author Affiliations
Matthew M. Wilkins, Christopher E. Valdivia, Henry P. Schriemer, Karin Hinzer

School of Electrical Engineering and Computer Science at the University of Ottawa, 25 Templeton Street, Ottawa K1N6N5, Canada

James Gupta

Institute for Microstructural Sciences, National Research Council, 1200 Montreal Road, Building M-50, Ottawa K1A 0R6, Canada

Abdelatif Jaouad, Boussairi Bouzazi, Simon Fafard, Abderraouf Boucherif, Richard Arès, Vincent Aimez

Laboratoire Nanotechnologies Nanosystèmes (LN2), CNRS UMI-3463, 3000 Boulevard Université, Sherbrooke J1K 0A5, Canada

Université de Sherbrooke, Institut Interdisciplinaire d’Innovation Technologique (3IT), 3000 Boulevard Université, Sherbrooke J1K 0A5, Canada

J. Photon. Energy. 7(2), 022502 (Apr 07, 2017). doi:10.1117/1.JPE.7.022502
History: Received July 20, 2016; Accepted November 29, 2016
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Abstract.  Four-junction solar cells for space and terrestrial applications require a junction with a band gap of 1  eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14  mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5  mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1  sun=100  mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5  mA/cm2 in all four subcells.

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© 2017 Society of Photo-Optical Instrumentation Engineers

Citation

Matthew M. Wilkins ; James Gupta ; Abdelatif Jaouad ; Boussairi Bouzazi ; Simon Fafard, et al.
"Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices", J. Photon. Energy. 7(2), 022502 (Apr 07, 2017). ; http://dx.doi.org/10.1117/1.JPE.7.022502


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