Special Series on Tandem Junction Solar Cells

Plasma-enhanced chemical vapor deposition epitaxy of Si on GaAs for tunnel junction applications in tandem solar cells

[+] Author Affiliations
Gwenaëlle Hamon

Total S.A. Renewables, Paris La Défense cedex, France

LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, Palaiseau, France

Nicolas Vaissiere, Wanghua Chen, Pere Roca i Cabarrocas

LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, Palaiseau, France

Romain Cariou

LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, Palaiseau, France

III-V Lab, Palaiseau, France

Raphaël Lachaume, José Alvarez, Jean-Paul Kleider

GeePs, CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, Gif-sur-Yvette Cedex, France

Jean Decobert

III-V Lab, Palaiseau, France

J. Photon. Energy. 7(2), 022504 (Apr 07, 2017). doi:10.1117/1.JPE.7.022504
History: Received January 14, 2017; Accepted March 13, 2017
Text Size: A A A

Abstract.  We fabricated (n) c-Si/ (p) GaAs heterojunctions, by combining low temperature (175°C) RF-PECVD for Si and metal organic vapor phase epitaxy for GaAs, aiming at producing hybrid tunnel junctions for Si/III-V tandem solar cells. The electrical properties of these heterojunctions were measured and compared to that of a reference III-V tunnel junction. Several challenges in the fabrication of such heterostructures were identified and we especially focused in this study on the impact of atomic hydrogen present in the plasma used for the deposition of silicon on p-doped GaAs doping level. The obtained results show that hydrogenation by H2 plasma strongly reduces the doping level at the surface of the GaAs:C grown film. Thirty seconds of H2 plasma exposition at 175°C are sufficient to reduce the GaAs film doping level from 1×1020  cm3 to <1×1019  cm3 at the surface and over a depth of about 20 nm. Such strong reduction of the doping level is critical for the performance of the tunnel junction. However, the doping level can be fully recovered after annealing at 350°C.

Figures in this Article
© 2017 Society of Photo-Optical Instrumentation Engineers

Citation

Gwenaëlle Hamon ; Nicolas Vaissiere ; Romain Cariou ; Raphaël Lachaume ; José Alvarez, et al.
"Plasma-enhanced chemical vapor deposition epitaxy of Si on GaAs for tunnel junction applications in tandem solar cells", J. Photon. Energy. 7(2), 022504 (Apr 07, 2017). ; http://dx.doi.org/10.1117/1.JPE.7.022504


Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement


 

  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.