Simultaneous Far-Infrared Absorption And Near-Infrared Photoluminescence Spectroscopy Of Bound Excitons

B P Clayman; M L. W Thewalt; D Labrie; T Timusk

doi:10.1117/12.938828

26 September 1986 Simultaneous Far-Infrared Absorption And Near-Infrared Photoluminescence Spectroscopy Of Bound Excitons

B P Clayman, M L. W Thewalt, D Labrie, T Timusk

Author Affiliations +

Proceedings Volume 0666, Far-Infrared Science and Technology; (1986) https://doi.org/10.1117/12.938828
Event: 1986 Quebec Symposium, 1986, Quebec City, Canada

Abstract

A system for simultaneously measuring the far-infrared absorption and near-infrared photoluminescence of excitons bound to defects in semiconductors is described. It is based on the integration of a FTIR spectrometer, a cryostat containing both the sample and a cooled bolometer, a laser to generate the excitons, and a grating spectrometer. Modes of operation are described and typical spectra are presented, along with a brief discussion of their significance.

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B P Clayman, M L. W Thewalt, D Labrie, and T Timusk "Simultaneous Far-Infrared Absorption And Near-Infrared Photoluminescence Spectroscopy Of Bound Excitons", Proc. SPIE 0666, Far-Infrared Science and Technology, (26 September 1986); https://doi.org/10.1117/12.938828

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