Large area transparent organic light-emitting device by using PFN modified ZnO as electron transfer layer

Dan Zhao; Yufan Liu; Mengge Wu; Junsheng Yu

doi:10.1117/12.2506444

6 February 2019 Large area transparent organic light-emitting device by using PFN modified ZnO as electron transfer layer

Dan Zhao, Yufan Liu, Mengge Wu, Junsheng Yu

Author Affiliations +

Proceedings Volume 10842, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Subdiffraction-limited Plasmonic Lithography and Innovative Manufacturing Technology; 108420R (2019) https://doi.org/10.1117/12.2506444
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China

Abstract

Transparent light-emitting devices based on organic optoelectronic materials and transparent electrodes can have broad impact on amount of areas including building decoration, smart displays and lighting system. In this work a transparent organic light-emitting device (TOLED) with a large area is demonstrated by using an inverted architecture. A polymer of ploy[(9,9-bis(3’-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)fluorene)] (PFN) is utilized to modify the energy level and morphology between ZnO and organic optoelectronic material. As a result, a brightness of ~1000 cd/m2 is obtained from both sides of the transparent device with a working area of 1 cm2. This work might inspire a promising approach for the fabrication of TOLEDs for both information display and solid-state lighting.

Citation Download Citation

Dan Zhao, Yufan Liu, Mengge Wu, and Junsheng Yu "Large area transparent organic light-emitting device by using PFN modified ZnO as electron transfer layer", Proc. SPIE 10842, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Subdiffraction-limited Plasmonic Lithography and Innovative Manufacturing Technology, 108420R (6 February 2019); https://doi.org/10.1117/12.2506444

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