p-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition

V. E. Sandana; D. J. Rogers; F. H. Teherani; P. Bove; R. McClintock; M. Razeghi

doi:10.1117/12.2520124

12 March 2019 p-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition

V. E. Sandana, D. J. Rogers, F. H. Teherani, P. Bove, R. McClintock, M. Razeghi

Author Affiliations +

Proceedings Volume 10919, Oxide-based Materials and Devices X; 109191H (2019) https://doi.org/10.1117/12.2520124
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Staggered back-gated Field Effect Transistor (FET) structures were made by growing Li-doped NiO on S_i3N₄/SiO₂/Si (111) using room temperature pulsed laser deposition. Optical studies showed over 80% transmission for the NiO:Li channel at wavelengths > 500nm. The MISFET revealed rectifying transfer characteristics, with a V_ON close to zero, a channel mobility of ~ 1 cm²/Vs, a gate leakage current (at +5V) of 0.8 mA and an I_ON/I_OFF ratio (at a Vgs of -15V) of ~ 10³. The transistors showed enhancement-mode output characteristics indicative of a p-type channel with sharp pinchoff, hard saturation, a comparatively high (milliampere range) Id and a relatively low on-resistance of ~11 kΩ. Hence the adoption of Li doping in NiO channels would appear to be a promising approach to obtain p-type TFTs with superior transparency, speed and energy efficiency.

Citation Download Citation

V. E. Sandana, D. J. Rogers, F. H. Teherani, P. Bove, R. McClintock, and M. Razeghi "p-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition", Proc. SPIE 10919, Oxide-based Materials and Devices X, 109191H (12 March 2019); https://doi.org/10.1117/12.2520124

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