Ion-sensitive field-effect transistors with Si3N4 and TaO2 gate insulator for studying self-assembly of photosynthetic proteins

Arash Takshi; Fatemeh Khorramshahi; Houman Yaghoubi; Daniel Jun; J. Thomas Beatty

doi:10.1117/12.2527358

30 August 2019 Ion-sensitive field-effect transistors with Si₃N₄ and TaO₂ gate insulator for studying self-assembly of photosynthetic proteins

Arash Takshi, Fatemeh Khorramshahi, Houman Yaghoubi, Daniel Jun, J. Thomas Beatty

Author Affiliations +

Proceedings Volume 11096, Organic and Hybrid Sensors and Bioelectronics XII; 1109607 (2019) https://doi.org/10.1117/12.2527358
Event: SPIE Organic Photonics + Electronics, 2019, San Diego, California, United States

Abstract

The reaction center (RC) protein from photosynthetic purple bacteria is an organic structure with the capability of absorbing photons at low light intensities and generating electron-hole pairs with a high efficiency. Application of this biomaterial for energy harvesting and sensor devices has been studied before. A key in employing RCs in an electrochemical device is to immobilize the proteins on an electrode. In this work, ion-sensitive field-effect transistors with Si₃N₄ and TaO₂ gate insulator were tested to measure the success rate in immobilizing the proteins. The results show that by far Si₃N₄ is a better choice than TaO₂, due to the effective self-assembly of the linker molecules. The density of the attached proteins to the Si₃N₄ transistor was estimated to be 5×10⁹ proteins/cm² by analyzing the drift in the threshold voltage of the transistor. The fabricated device also presented the feasibility of using the RCs in an integrated photo-transistor.

Conference Presentation

Citation Download Citation

Arash Takshi, Fatemeh Khorramshahi, Houman Yaghoubi, Daniel Jun, and J. Thomas Beatty "Ion-sensitive field-effect transistors with Si₃N₄ and TaO₂ gate insulator for studying self-assembly of photosynthetic proteins", Proc. SPIE 11096, Organic and Hybrid Sensors and Bioelectronics XII, 1109607 (30 August 2019); https://doi.org/10.1117/12.2527358

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available