An innovative TPV device design based on narrow gap IV-VI semiconductor MQW structures

Majed Khodr; Manisha Chakraburtty; Patrick J. McCann

doi:10.1117/12.2526919

9 September 2019 An innovative TPV device design based on narrow gap IV-VI semiconductor MQW structures

Majed Khodr, Manisha Chakraburtty, Patrick J. McCann

Proceedings Volume 11121, New Concepts in Solar and Thermal Radiation Conversion II; 1112104 (2019) https://doi.org/10.1117/12.2526919
Event: SPIE Optical Engineering + Applications, 2019, San Diego, California, United States

Abstract

A thermophotovoltaic (TPV) device design based on multiple quantum well (MQW) materials composed of Pb_0.81Sn_0.19Se wells and Pb_0.80Sr_0.20Se barriers, which are nanostructured materials that can be gown on low-cost silicon, was modeled to predict electrical power generation densities. MQW materials with intersubband energy gaps of 343 meV and 450 meV in a dual junction configuration were studied. For a thermal radiator at a temperature of 1364ºC the short circuit current density was estimated to be 12.1 A/cm² for each junction. Open circuit voltages for each junction ranged from 130 mV to 262 mV depending on bandgap and temperature. Power generation densities for this dual junction device increased from 2.7 W/cm² to 3.4 W/cm² as temperature decreased from 50ºC to 7ºC. Using a conservative value of $1/cm2 for the manufacturing of this silicon-based TPV device technology, the costs for this novel electrical power generation technology are projected to be less than $0.30/W.

Conference Presentation

Citation Download Citation

Majed Khodr, Manisha Chakraburtty, and Patrick J. McCann "An innovative TPV device design based on narrow gap IV-VI semiconductor MQW structures", Proc. SPIE 11121, New Concepts in Solar and Thermal Radiation Conversion II, 1112104 (9 September 2019); https://doi.org/10.1117/12.2526919

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