Carrier lifetime of black silicon as a photoconductor

Shengkun Zhang; Robert R. Alfano

doi:10.1117/12.2543587

2 March 2020 Carrier lifetime of black silicon as a photoconductor

Shengkun Zhang, Robert R. Alfano

Proceedings Volume 11274, Physics and Simulation of Optoelectronic Devices XXVIII; 112741Y (2020) https://doi.org/10.1117/12.2543587
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Photoconducting properties of heavily doped black silicon (BSi) fabricated by laser-chemical etching method have been investigated. BSi is used as a photoconductor in the study of carrier transport, photo response and minority carrier lifetime of the BSi material. It is found that the BSi is a good photoconductor with enhanced absorption in NIR from the density of states from the cone like spikes on 2 D surface. Metal contacts can be easily made by inserting metal stripes onto the BSi surface due to its high conductivity. Photocurrent spectra were measured under different voltages in the wavelength range 300 nm ~ 1300 nm. From the linear relationship between the photocurrent and the voltage, the minority carrier lifetime is determined to be about 171 μs for an electron density of 7x10¹⁷ cm^-3 , which is more than 17 times as long as that for n-type silicon. The experimental results demonstrates that the BSi is a suitable material for solar cells not only as absorber but also as conductor.

Citation Download Citation

Shengkun Zhang and Robert R. Alfano "Carrier lifetime of black silicon as a photoconductor", Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112741Y (2 March 2020); https://doi.org/10.1117/12.2543587

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KEYWORDS

Silicon

Semiconductor lasers

Photoresistors

Electrodes

Solar cells

Etching

Metals

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