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10 March 2020 High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation)
Xin Yi, Shiyu Xie, Baolai L. Liang, Leh W. Lim, Mukul C. Debnath, Diana L. Huffaker, Chee Hing Tan, John P. R. David
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Proceedings Volume 11276, Optical Components and Materials XVII; 112760E (2020) https://doi.org/10.1117/12.2544956
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
AlAs0.56Sb0.44 is a promising avalanche material which can be grown lattice-matched to InP and therefore use InGaAs as the absorption region in a Separate Absorption and Multiplication APD (SAM-APD). The electron and hole ionisation coefficients in this material are very dissimilar and our experiments show that this leads to AlAs0.56Sb0.44 having the lowest excess noise performance of any InP based material system (F = 2.2 at M = 40) reported to date. Simulations suggest that operation at 1550 nm and 25 GB s-1 with a sensitivity of -25.7 dBm is possible in a normal incidence SAM-APD.
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Xin Yi, Shiyu Xie, Baolai L. Liang, Leh W. Lim, Mukul C. Debnath, Diana L. Huffaker, Chee Hing Tan, and John P. R. David "High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation)", Proc. SPIE 11276, Optical Components and Materials XVII, 112760E (10 March 2020); https://doi.org/10.1117/12.2544956
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KEYWORDS
Avalanche photodiodes
Absorption
Indium gallium arsenide
Ionization
Signal processing
Silicon
Avalanche photodetectors
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