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9 March 2020 First-principles studies of radiative and nonradiative recombination in halide perovskites (Conference Presentation)
Chris G. Van de Walle
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Proceedings Volume 11302, Light-Emitting Devices, Materials, and Applications XXIV; 1130206 (2020) https://doi.org/10.1117/12.2538696
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Understanding recombination mechanisms in halide perovskites is of key importance to their applications in photovoltaics and light emission. We perform first-principles calculations to compute the radiative and nonradiative recombination coefficients in the methylammonium lead iodide as well as in other halide perovskites. The computed radiative recombination coefficient is as high as in typical direct-gap semiconductors used in optoelectronics. However, our first-principles calculations of nonradiative rates show that strong Auger recombination will suppress efficiency of light emitters. I will also discuss defect-assisted recombination, a problem closely coupled to the issue of degradation. Work performed in collaboration with Xie Zhang, Jimmy-Xuan Shen, and Wennie Wang, and supported by DOE.
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Chris G. Van de Walle "First-principles studies of radiative and nonradiative recombination in halide perovskites (Conference Presentation)", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 1130206 (9 March 2020); https://doi.org/10.1117/12.2538696
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KEYWORDS
Perovskite
Diffractive optical elements
Lead
Light emitting diodes
Optoelectronics
Semiconductors
Solar cells
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