InGaAs/InP PIN photodetectors based on micropillar arrays

Shaojie Xia; Jun Chen

doi:10.1117/12.2564982

17 April 2020 InGaAs/InP PIN photodetectors based on micropillar arrays

Shaojie Xia, Jun Chen

Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 114554P (2020) https://doi.org/10.1117/12.2564982
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China

Abstract

In_0.53Ga_0.47As/InP photodetectors with micropillar arrays were fabricated and measured. Two different sizes of array detectors were prepared with diameter of 2μm(period: 6μm) and 4μm(period: 8μm), respectively. The two-dimensional array photodetectors have a minimum surface reflectivity of 24% and 26%, respectively, while the surface reflectivity of the non-array detector is about 38%. The responsivity of the 2μm array device and the 4μm array device reached 0.905 and 0.612 A/W at -0.8V, respectively.

Citation Download Citation

Shaojie Xia and Jun Chen "InGaAs/InP PIN photodetectors based on micropillar arrays", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 114554P (17 April 2020); https://doi.org/10.1117/12.2564982

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