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5 March 2021 Hot carriers and phonon relaxation processes in InAs/AlAsSb quantum well solar cells
Ian R. Sellers, Brandon K. Durant, Vincent R Whiteside, Jivtesh Garg, Kyle R. Dorman, Tetsuya D. Mishima, Michael B. Santos, Hamidreza Esmaielpour, Jean-Francois Guillemoles, Daniel Suchet
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Proceedings Volume 11681, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices X; 116810P (2021) https://doi.org/10.1117/12.2576948
Event: SPIE OPTO, 2021, Online Only
Abstract
This work describes the relative contribution of intervalley scattering and phonon bottleneck effects in type-II InAs/AlAsSb quantum well solar cells. Moreover, recent predictions also suggest that altering the QW to barrier thickness ratio in these structures enables control of the phonon scattering rate, and therefore hot carrier relaxation may be inhibited by design. Experimental analysis of these predictions is presented in solar cell architectures, as well as, their effects upon both the optical and electrical performance of these devices.
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Ian R. Sellers, Brandon K. Durant, Vincent R Whiteside, Jivtesh Garg, Kyle R. Dorman, Tetsuya D. Mishima, Michael B. Santos, Hamidreza Esmaielpour, Jean-Francois Guillemoles, and Daniel Suchet "Hot carriers and phonon relaxation processes in InAs/AlAsSb quantum well solar cells", Proc. SPIE 11681, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices X, 116810P (5 March 2021); https://doi.org/10.1117/12.2576948
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KEYWORDS
Phonons
Solar cells
Quantum wells
Scattering
Control systems
Electrons
Heterojunctions
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