Morphological improvement and elimination of V-pits from long-wavelength all-InGaN based uLEDs grown by MOCVD on compliant substrates

Ryan C. White; Michel Khoury; Matthew S. Wong; Stacia Keller; David Sotta; Shuji Nakamura; Steven P. DenBaars

doi:10.1117/12.2578655

5 March 2021 Morphological improvement and elimination of V-pits from long-wavelength all-InGaN based μLEDs grown by MOCVD on compliant substrates

Ryan C. White, Michel Khoury, Matthew S. Wong, Stacia Keller, David Sotta, Shuji Nakamura, Steven P. DenBaars

Author Affiliations +

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861N (2021) https://doi.org/10.1117/12.2578655
Event: SPIE OPTO, 2021, Online Only

Abstract

We examine the MOCVD growth conditions on c-plane semi-relaxed InGaN substrates necessary for morphological improvement, defect reduction, and elimination of V-pits during epitaxy prior to the active region growth. V-pit defects can propagate through the crystal as epitaxy continues, causing serious morphological degradation. These defects may also be a source of leakage current if they form a low-resistance path through p-n junction. By employing an InGaN/GaN periodic structure, thick base layers can be grown with the morphology improving as the epitaxy proceeds, allowing for high quality layers to be achieved. High temperature (HT) GaN interlayers in the InGaN/GaN base layer structure then continue to reduce defects significantly, notably eliminating the V-pit type defect, and significantly improving growth morphology. Resulting microLEDs on these improved base layers exhibit a nearly three order of magnitude reduction in leakage current density at 1V, far below the μLED turn-on threshold, and significantly lower dynamic resistance. This result indicates the reduction in base layer defects and layer morphology improvement results in significant improvement in electrical performance and enables production of viable LEDs.

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Ryan C. White, Michel Khoury, Matthew S. Wong, Stacia Keller, David Sotta, Shuji Nakamura, and Steven P. DenBaars "Morphological improvement and elimination of V-pits from long-wavelength all-InGaN based μLEDs grown by MOCVD on compliant substrates", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861N (5 March 2021); https://doi.org/10.1117/12.2578655

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