Quantum-dot solar cells are a promising high-efficiency concept, but suffer from low absorption. Resonant light trapping can enable to absorb most of the incident light while maintaining good device quality. In this paradigm, the absorption depends critically on the vertical position of the quantum dot layers, but this has been largely ignored so far (this also applies to quantum wells). Here, we show the importance of the position of 10 InAs layers in a GaAs Fabry-Perot cavity. We then extend this approach to multi-resonant absorption, showing the potential absorption gain from optimizing the position of quantum dots in full devices.
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