Type-II heterostructure based on two-dimensional arsenene and PtS2 with novel light absorption performance

Ruxin Zheng; Kai Ren; Jin Yu; Zhengyang Zhu; Qingyun Sun

doi:10.1117/12.2620186

9 December 2021 Type-II heterostructure based on two-dimensional arsenene and PtS₂with novel light absorption performance

Ruxin Zheng, Kai Ren, Jin Yu, Zhengyang Zhu, Qingyun Sun

Author Affiliations +

Proceedings Volume 12030, Third International Conference on Optoelectronic Science and Materials (ICOSM 2021); 120300U (2021) https://doi.org/10.1117/12.2620186
Event: Third International Conference on Optoelectronic Science and Materials (ICOSM 2021), 2021, Hefei, China

Abstract

A number of unusual properties of As/PtSe₂ vdW heterostructure, such as geometric structure, optical and electronic properties, are explored by using first-principle calculation method. The results show that band gap of As/PtSe₂ vdW heterostructure is 0.942 eV and displays type-II energy band structure, which can effectively curb reassemble of electrons and holes, which is almost consistent with the properties of semiconductor materials. In addition, the charge transfer between As and PtSe₂ monolayers is 0.0474 |e| and the interface decreased by 3.49 eV. Furthermore, the As/PtSe₂ vdW heterostructure shows ultra-strong light absorption ability in both visible and infrared regions, indicating that As/PtSe₂ vdW heterostructure has hidden purpose in photoelectric devices and photocatalysis.

Citation Download Citation

Ruxin Zheng, Kai Ren, Jin Yu, Zhengyang Zhu, and Qingyun Sun "Type-II heterostructure based on two-dimensional arsenene and PtS₂with novel light absorption performance", Proc. SPIE 12030, Third International Conference on Optoelectronic Science and Materials (ICOSM 2021), 120300U (9 December 2021); https://doi.org/10.1117/12.2620186

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KEYWORDS

Heterojunctions

Absorption

Electrons

Interfaces

Visible radiation

Optical properties

Chemical species

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