Studies of InSb metal oxide semiconductor structure fabricated by photo-CVD using Si2H6 and N2O

C. J. Huang; Yan-Kuin Su; R. L. Leu

doi:10.1117/12.47183

1 November 1991 Studies of InSb metal oxide semiconductor structure fabricated by photo-CVD using Si₂H₆ and N₂O

C. J. Huang, Yan-Kuin Su, R. L. Leu

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47183
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Silicon oxide films (SiO_x, O₂H₆) with nitrous oxide (N₂O) at temperature below 200 degree(s)C using 2537 A ultraviolet (UV) light. Ellipsometric studies prove that the refractive index and etching rate of the photo-oxide depend on the substrate temperatures and gas ratio. Composition and electrical properties of the interface (SiO_x/InSb) are discussed by using Auger electron spectroscopy (AES) and metal-oxide-semiconductor capacitors. Hysteresis free capacitance- voltage (C-V) characteristics measured at 77 K are attained and the minimum interface state density is only 1.5 X 10¹¹ cm^-2eV^-1.

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C. J. Huang, Yan-Kuin Su, and R. L. Leu "Studies of InSb metal oxide semiconductor structure fabricated by photo-CVD using Si₂H₆ and N₂O", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47183

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