Zn3P2 as a material for optoelectronics devices

Jan Misiewicz; Jan Szatkowski; Nella Mirowska; Zbigniew Gumienny; Ewa Placzek-Popko

doi:10.1117/12.57015

1 February 1992 Zn₃P₂ as a material for optoelectronics devices

Jan Misiewicz, Jan Szatkowski, Nella Mirowska, Zbigniew Gumienny, Ewa Placzek-Popko

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57015
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Mg-Zn₃P₂ structures are examined as solar energy converter and broad-range photodetector. A distinct photodichroism observed for junctions prepared on oriented single crystal is applied in light polarization step indicator.

Citation Download Citation

Jan Misiewicz, Jan Szatkowski, Nella Mirowska, Zbigniew Gumienny, and Ewa Placzek-Popko "Zn₃P₂ as a material for optoelectronics devices", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57015

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