Effect of annealing on Fermi level pinning of low-temperature molecular-beam epitaxial GaAs

Hongen Shen; Jagadeesh Pamulapati; Robert A. Lux; Mitra B. Dutta; F. C. Rong; Monica Alba Taysing-Lara; L. Fotiadis; L. Calderon; Yicheng Lu

doi:10.1117/12.60458

1 July 1992 Effect of annealing on Fermi level pinning of low-temperature molecular-beam epitaxial GaAs

Hongen Shen, Jagadeesh Pamulapati, Robert A. Lux, Mitra B. Dutta, F. C. Rong, Monica Alba Taysing-Lara, L. Fotiadis, L. Calderon, Yicheng Lu

Author Affiliations +

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60458
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The Fermi level position in low temperature (LT) GaAs is studied by photoreflectance (PR). The experiments show that the Fermi level in both the as-grown and the annealed LT-GaAs is firmly pinned, however, the pinning position occurs at different energies: 0.47 eV below the conduction band edge for the as-grown samples and 0.65 eV below the conduction band edge for the annealed samples. The pinning in the as-grown LT-GaAs is the result of a high degree of charge compensation of deep levels, while the pinning in the annealed LT-GaAs is due to the depletion of carriers by the Schottky barrier at the metallic As precipitates. From the measured Fermi level and ionization ratio of As antisites, the (0/+) donor level of the As antisite is found to be at E_c - 0.57 eV.

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Hongen Shen, Jagadeesh Pamulapati, Robert A. Lux, Mitra B. Dutta, F. C. Rong, Monica Alba Taysing-Lara, L. Fotiadis, L. Calderon, and Yicheng Lu "Effect of annealing on Fermi level pinning of low-temperature molecular-beam epitaxial GaAs", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60458

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KEYWORDS

Gallium arsenide

Annealing

Arsenic

Neodymium

Solids

Interfaces

Absorption

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