Photoreflectance characteristics of AlGaAs/GaAs structures

Bernard L. Weiss; Ahn Goo Choo; Howard E. Jackson

doi:10.1117/12.60454

1 July 1992 Photoreflectance characteristics of AlGaAs/GaAs structures

Bernard L. Weiss, Ahn Goo Choo, Howard E. Jackson

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60454
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Room temperature photoreflectance (PR) has been used to study a series of AlGaAs/GaAs heterostructures, which have been shown by electrical measurements to contain a two- dimensional electron gas (2-DEG), with varying carrier concentrations, mobilities, and structures. Oscillatory features in the PR spectra observed above the GaAs bandgap energy cannot be simply interpreted as Franz-Keldysh oscillations (FKO).

Citation Download Citation

Bernard L. Weiss, Ahn Goo Choo, and Howard E. Jackson "Photoreflectance characteristics of AlGaAs/GaAs structures", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60454

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