Paper
24 June 1993 Formation of microrelief on silicon surface under action of radiation pulses with different polarization
Vladimir S. Makin, Oleg P. Gashkov, Mikhail N. Libenson, Vladimir V. Trubaev
Author Affiliations +
Proceedings Volume 1856, Laser Radiation Photophysics; (1993) https://doi.org/10.1117/12.147625
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
The regular structures formation on a silicon surface under the millisecond pulse of linear- polarized, circular-polarized and unpolarized Nd-laser light irradiation has been studied experimentally. The surface structures induced by the interference of incident wave and surface electromagnetic waves and also the double- and triple-period structures with periods d equals 2 - 3 microns were observed in the nonhomogeneous melting regime. The diffraction pattern separation at higher incident fluence and incident angles have been observed. The main peculiarities of the surface structures formation were explained by polaritonic mechanism.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir S. Makin, Oleg P. Gashkov, Mikhail N. Libenson, and Vladimir V. Trubaev "Formation of microrelief on silicon surface under action of radiation pulses with different polarization", Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); https://doi.org/10.1117/12.147625
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Diffraction

Semiconductor lasers

Pulsed laser operation

Semiconductors

Crystals

Electromagnetic radiation

Back to Top