Optical absorption and photovoltaic effect in <alpha>-In2Te3

Camelia Mushinschi; C. Ghizdeanu; Gabriel-Octavian Lazar; Iuliana-Mihaela J. Lazar

doi:10.1117/12.203488

8 March 1995 Optical absorption and photovoltaic effect in α-In₂Te₃

Camelia Mushinschi, C. Ghizdeanu, Gabriel-Octavian Lazar, Iuliana-Mihaela J. Lazar

Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203488
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania

Abstract

The fundamental band gap of (alpha) -In₂Te₃ as a function of temperature has been deduced from transmission measurements. The absorption edge is due to indirect allowed transitions. Photovoltaic effect has been extensively investigated in gold-indium telluride Schottky barriers, realized through vacuum evaporation. A barrier of 0,67 eV height, has been found by means of the spectral dependence of the photoemission current.

Citation Download Citation

Camelia Mushinschi, C. Ghizdeanu, Gabriel-Octavian Lazar, and Iuliana-Mihaela J. Lazar "Optical absorption and photovoltaic effect in α-In₂Te₃", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); https://doi.org/10.1117/12.203488

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