A Study Of Photovoltaic Loss-Mechanisms Due to Defects and Grain Boundaries in Polycrystalline Silicon

B. L. Sopori

doi:10.1117/12.970579

25 November 1980 A Study Of Photovoltaic Loss-Mechanisms Due to Defects and Grain Boundaries in Polycrystalline Silicon

B. L. Sopori

Proceedings Volume 0248, Role of Electro-Optics in Photovoltaic Energy Conversion; (1980) https://doi.org/10.1117/12.970579
Event: 24th Annual Technical Symposium, 1980, San Diego, United States

Abstract

Various photovoltaic loss-mechanisms associated with defects and grain boundaries (g.b.'s) in polycrystalline silicon have been experimentally studied. Analysis was carried out on two types of substrates/cells viz. Wacker Silso and laser crystallized RTR ribbons. Solar cells were fabricated on selected regions of the substrates and their characteristics (V_OC, I_SC, F.F.) related the substrate structure. Mechanisms related to photovoltaic losses are divided into two categories: electronic and physical. Parameters describing electronic loss mechanisms, such as changes in minority carrier diffusion length, dark current and local photo-current losses were measured and their dependence on density and type of defects was determined. A variety of analytical techniques were used for this study. These include I-V characterization of solar cells, I-V characterization of g.b.'s and light intensity dependences of some material parameters. Loss mechanisms associated with physical effects are defect-defect and impurity-defect interactions. It is shown that physical effects such as impurity segregation and defect annihilation can lead to significant loss/gain in photovoltaic characteristics.

Citation Download Citation

B. L. Sopori "A Study Of Photovoltaic Loss-Mechanisms Due to Defects and Grain Boundaries in Polycrystalline Silicon", Proc. SPIE 0248, Role of Electro-Optics in Photovoltaic Energy Conversion, (25 November 1980); https://doi.org/10.1117/12.970579

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