Vacuum-evaporated indium tin oxide layers

S. Venkatasubramanian; K. R. Murali; N. Rangarajan; V. Subramanian; T. Elango

doi:10.1117/12.217351

23 August 1995 Vacuum-evaporated indium tin oxide layers

S. Venkatasubramanian, K. R. Murali, N. Rangarajan, V. Subramanian, T. Elango

Proceedings Volume 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV; (1995) https://doi.org/10.1117/12.217351
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

Indium tin oxide (ITO) film has been prepared by sequential vacuum deposition of indium and tin on plain glass followed by oxidation at temperatures around 400 degrees - 650 degrees Celsius. By a proper control of the time of evaporation and the heating current the concentration of vacuum evaporated indium was maintained constant and tin concentration was varied in the range of 10 - 60% by weight. ITO films with good optical and electrical properties can be obtained by adjusting the ratio of Sn:In in the range of 1:9 to 1:35 after heat- treatment at 400 degrees to 600 degrees Celsius. The films exhibit a sheet resistance of 20 ohms per square with an optical transmission of 60% at 500 nm when the Sn:In ratio was maintained at 1:9. The film was found suitable for ITO/Si solar cells and as substrates for photo anodes in PEC cells.

Citation Download Citation

S. Venkatasubramanian, K. R. Murali, N. Rangarajan, V. Subramanian, and T. Elango "Vacuum-evaporated indium tin oxide layers", Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); https://doi.org/10.1117/12.217351

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