Material Characterization By Raman Scattering

Raphael Tsu

doi:10.1117/12.931690

30 April 1981 Material Characterization By Raman Scattering

Raphael Tsu

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931690
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

Raman scattering has been used as material characterizations such as crystal orientation, imperfections, structural and compositional disorders, carrier concentration, and even mobility. In particular, specific applications for the study of alloy composition in GaAlAs and GaA1P; for GaAlAs-GaAs superlattice; and for laser annealing of ion-implanted amorphous Si and GaAs; will be presented in detail. Two examples on the determination of carrier concentrations; for polar crystals such as GaAs; and for non-polar crystals such as Si, are also presented.

Citation Download Citation

Raphael Tsu "Material Characterization By Raman Scattering", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931690

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