Flip-chip-joined 8x8 array of bottom-emitting 850-nm light-emitting diodes for interconnect applications

Paul L. Heremans; Patrick Merken; Jan Genoe; Reiner Windisch; Chris A. Van Hoof; Gustaaf Borghs

doi:10.1117/12.307579

5 May 1998 Flip-chip-joined 8x8 array of bottom-emitting 850-nm light-emitting diodes for interconnect applications

Paul L. Heremans, Patrick Merken, Jan Genoe, Reiner Windisch, Chris A. Van Hoof, Gustaaf Borghs

Proceedings Volume 3288, Optoelectronic Interconnects V; (1998) https://doi.org/10.1117/12.307579
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.

Citation Download Citation

Paul L. Heremans, Patrick Merken, Jan Genoe, Reiner Windisch, Chris A. Van Hoof, and Gustaaf Borghs "Flip-chip-joined 8x8 array of bottom-emitting 850-nm light-emitting diodes for interconnect applications", Proc. SPIE 3288, Optoelectronic Interconnects V, (5 May 1998); https://doi.org/10.1117/12.307579

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