High-energy-per-pulse excimer laser for silicon annealing

Bruno Godard; Dorian Zahorski

doi:10.1117/12.321588

14 September 1998 High-energy-per-pulse excimer laser for silicon annealing

Bruno Godard, Dorian Zahorski

Proceedings Volume 3343, High-Power Laser Ablation; (1998) https://doi.org/10.1117/12.321588
Event: High-Power Laser Ablation, 1998, Santa Fe, NM, United States

Abstract

Forty-five joule per pulse XeCl laser with good homogeneity (plus or minus 1%) and repeatability (plus or minus 1%) allow to increase the quality and decrease the cost of annealing of amorphous Silicon compared to Solid Phase Crystallization and Scanning Excimer Laser Annealing.

Citation Download Citation

Bruno Godard and Dorian Zahorski "High-energy-per-pulse excimer laser for silicon annealing", Proc. SPIE 3343, High-Power Laser Ablation, (14 September 1998); https://doi.org/10.1117/12.321588

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