Role of growth defects on carrier dynamics: semi-insulating GaAs

Vygantas Mizeikis; Kestutis Jarasiunas; Jurgis Storasta; V. Gudelis; L. Bastiene; M. Sudzius

doi:10.1117/12.306208

20 April 1998 Role of growth defects on carrier dynamics: semi-insulating GaAs

Vygantas Mizeikis, Kestutis Jarasiunas, Jurgis Storasta, V. Gudelis, L. Bastiene, M. Sudzius

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306208
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

Using transient light-induced grating experiments, we demonstrate important consequences of interaction between photoexcited electrons and EL2 centers in semiinsulating GaAs at room temperature. Carrier lifetime is found to depend on the local density and ionization ratio of the EL2 centers. A substantial slow down of diffusive grating decay due to the interaction between electrons and photoionized EL2 donors is observed.

Citation Download Citation

Vygantas Mizeikis, Kestutis Jarasiunas, Jurgis Storasta, V. Gudelis, L. Bastiene, and M. Sudzius "Role of growth defects on carrier dynamics: semi-insulating GaAs", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306208

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