Paper
22 October 1999 Improving the high-energy sensitivity of x-ray CCDs
Adam Keay, Andrew D. Holland, David J. Burt
Author Affiliations +
Abstract
We present a method of improving the quantum efficiency of MOS CCDs. We show that a change of operation can increase the depletion depth of standard bulk devices. The conclusions point to a point to a potential increase in the depletion depth of 300 percent by the use of optimized materials and operating conditions.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adam Keay, Andrew D. Holland, and David J. Burt "Improving the high-energy sensitivity of x-ray CCDs", Proc. SPIE 3765, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X, (22 October 1999); https://doi.org/10.1117/12.366540
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KEYWORDS
Charge-coupled devices

Silicon

X-rays

Copper

Quantum efficiency

Iron

Electrodes

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