Modeling commercial MOCVD reactors: role of complex chemistry models

Sandip Mazumder; Samuel A. Lowry

doi:10.1117/12.391446

14 July 2000 Modeling commercial MOCVD reactors: role of complex chemistry models

Sandip Mazumder, Samuel A. Lowry

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391446
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Over-heating of semitransparent fused silica (quartz) pieces within MetalOrganic Chemical Vapor Deposition (MOCVD) reactors may result in parasitic deposition on reactor walls, leading to loss of precursors. Although growth on the substrate (epitaxial growth) is diffusion-limited, parasitic deposition occurs at colder temperatures and is therefore, rate-limited. The modeling of low-temperature deposition requires complex chemical mechanisms, which account not only for the kinetics of decomposition, but also the kinetics of adsorption and desorption at the surfaces. In this article, the role of complex chemistry has been demonstrated for growth of Gallium- Arsenide in a commercial horizontal reactor (Crystal Specialties 425). Numerical computations were performed for a wide range of operating conditions. Comparison of numerical predictions with experimental data clearly indicates the need for the development and use of detailed chemistry in modeling parasitic deposition in commercial reactors.

Citation Download Citation

Sandip Mazumder and Samuel A. Lowry "Modeling commercial MOCVD reactors: role of complex chemistry models", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391446

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