Behavior of current under dc field and switching, and current-controlled negative resistance and oscillation on MOM device of Bi2O3 film

Kazunori Komorita

doi:10.1117/12.408467

29 November 2000 Behavior of current under dc field and switching, and current-controlled negative resistance and oscillation on MOM device of Bi₂O₃ film

Kazunori Komorita

Author Affiliations +

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408467
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

By using the MOM device of Bi₂O₃ films, some electrical properties on these films or the device are studied as follows: (1) The behavior of the electric current across the thick Bi₂O₃ films under DC field, is elucidated by the formula Ivaries direct asVⁿ for the regions of low (n equals 1), ohmic (n equals 1), high (n > 2) conductivities and SCLC (n >= 1.5 approximately 2). A hysteresis of the I-V curve results from the residual space charge and polarization in the device. (2) The memory switching and oscillation (in CCNR) phenomena on the device of thin Bi₂O₃ films are observed under the AC applied voltage in the room temperature and 77 K. These rest upon a thermal effect due to the current injection to the device.

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Kazunori Komorita "Behavior of current under dc field and switching, and current-controlled negative resistance and oscillation on MOM device of Bi₂O₃ film", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408467

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