Preparation and properties of IrO2 thin films grown by dc magnetron reactive sputtering method

Shijun Wang; Aili Ding; Pingsun Qiu; Xiyun He; Weigen Luo

doi:10.1117/12.408293

29 November 2000 Preparation and properties of IrO₂ thin films grown by dc magnetron reactive sputtering method

Shijun Wang, Aili Ding, Pingsun Qiu, Xiyun He, Weigen Luo

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408293
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Iridium oxide (IrO₂) thin films were successfully grown on SiO₂/Si(100) substrate by DC magnetron reactive sputtering method with an Ir target (99.99% purity). The effects of sputtering parameters and annealing conditions on the crystalline nature and morphology of IrO₂ thin films were discussed. High orientation at (110) or (200) of IrO₂ thin films were occurred by annealed films. For fatigue properties, PZT thin films using an IrO₂ electrode have largely improved than that using a Pt/Ti electrode.

Citation Download Citation

Shijun Wang, Aili Ding, Pingsun Qiu, Xiyun He, and Weigen Luo "Preparation and properties of IrO₂ thin films grown by dc magnetron reactive sputtering method", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408293

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