Paper
30 May 2001 Dependence of optical properties of porous silicon on its porosity
M. I. Strashnikova, Vladimir L. Voznyi, Vladimir Ya. Gayvoronsky, V. Reznichenko, R. Hristosenko
Author Affiliations +
Proceedings Volume 4418, Eighth International Conference on Nonlinear Optics of Liquid and Photorefractive Crystals; 44180Y (2001) https://doi.org/10.1117/12.428320
Event: Eighth International Conference on Nonlinear Optics of Liquid and Photorefractive Crystals, 2000, Alushta, Crimea, Ukraine
Abstract
Absorption and refractive index dispersion spectra of porous silicon (por-Si) samples with different porosity were measured for energy interval 1.5-3.5 eV at room temperature. Experimental data were compared with dependencies calculated using Bruggemann formula for dielectric function of multicomponent medium consisted of crystalline silicon. SiO2, amorphous silicon and voids. The best agreement between experimental data and theory was obtained for the comparatively large concentration of SiO2 in the por-Si samples.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. I. Strashnikova, Vladimir L. Voznyi, Vladimir Ya. Gayvoronsky, V. Reznichenko, and R. Hristosenko "Dependence of optical properties of porous silicon on its porosity", Proc. SPIE 4418, Eighth International Conference on Nonlinear Optics of Liquid and Photorefractive Crystals, 44180Y (30 May 2001); https://doi.org/10.1117/12.428320
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KEYWORDS
Silicon

Optical properties

Absorption

Amorphous silicon

Crystals

Dielectrics

Refractive index

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