GaN blue-light-emitting diode using room-temperature ohmic contacts

Jong-Lam Lee; Ho Won Jang; Jung Gu Kim; Changmin Jeon

doi:10.1117/12.447098

30 October 2001 GaN blue-light-emitting diode using room-temperature ohmic contacts

Jong-Lam Lee, Ho Won Jang, Jung Gu Kim, Changmin Jeon

Proceedings Volume 4598, Photonics Technology in the 21st Century; (2001) https://doi.org/10.1117/12.447098
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

Room temperature ohmic contacts to p- and n-type GaN using surface treatments were applied to the fabrication of GaN blue light emitting diode (LED). The state-of-the-art LED operation of the forward voltage of 3.1 V at the injection current of 20 mA was demonstrated without annealing processes. The surface treatment on p-type GaN using aqua regia solution caused the contact resistivity to decrease by three orders of magnitude. The inductively coupled plasma treatment on n-type GaN resulted in the contact resistivity of ~ 10E-6 ohm-cm2 at as-deposited state. Both treatments allowed the room temperature ohmic contacts to be realized on both substrates. Angle resolved synchrotron x-ray photoelectron spectroscopy was employed to examine the atomic composition at the treated surface. From this, the formation of ohmic contacts was deduced as due to the production of vacancies below the contact, that is, Ga vacancies for p-type contact and N vacancies for n-type one.

Citation Download Citation

Jong-Lam Lee, Ho Won Jang, Jung Gu Kim, and Changmin Jeon "GaN blue-light-emitting diode using room-temperature ohmic contacts", Proc. SPIE 4598, Photonics Technology in the 21st Century, (30 October 2001); https://doi.org/10.1117/12.447098

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