Picosecond Raman studies of field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure

Y. Chen; Kong-Thon F. Tsen; Otto F. Sankey; David K. Ferry

doi:10.1117/12.470428

11 June 2002 Picosecond Raman studies of field-induced transient hole transport in an Al_0.3Ga_0.7As-based p-i-n nanostructure

Y. Chen, Kong-Thon F. Tsen, Otto F. Sankey, David K. Ferry

Author Affiliations +

Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470428
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Electric field-induced transient hole transport in an Al_0.3Ga_0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T=300K. Our experimental results demonstrate that at T=300K, for a 5-ps excitation laser pulse and a hole density of n_happroximately equals 5x10¹⁷cm^-3, transient hole drift velocity increases from zero to approximately equals (3+/- 0.7)x10⁶cm/sec when the applied electric field intensity increases from E=0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at approximately equals (8+/- 0.8)x10⁶cm/sec for the applied electric field intensity of E>=25 kV/cm and up to 65 kV/cm.

Citation Download Citation

Y. Chen, Kong-Thon F. Tsen, Otto F. Sankey, and David K. Ferry "Picosecond Raman studies of field-induced transient hole transport in an Al_0.3Ga_0.7As-based p-i-n nanostructure", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); https://doi.org/10.1117/12.470428

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