Effects of stress annealing on the index of refraction of SiO2 layers in MOS devices

Witold Rzodkiewicz; Henryk M. Przewlocki

doi:10.1117/12.501538

1 April 2003 Effects of stress annealing on the index of refraction of SiO₂ layers in MOS devices

Witold Rzodkiewicz, Henryk M. Przewlocki

Proceedings Volume 5064, Lightmetry 2002: Metrology and Testing Techniques Using Light; (2003) https://doi.org/10.1117/12.501538
Event: Lightmetry 2002, 2002, Warsaw, Poland

Abstract

In this paper we present the results of a study of the effect of high-temperature stress annealing in nitrogen on the index of refraction of SiO₂ layers in MOS (metal/oxide/semiconductor) devices. The dependence of mechanical stress in the Si-SiO₂ system on the annealing conditions has been experimentally characterized. Subsequently, we have correlated such properties with the dependence of the index of refraction on processing conditions and oxide thickness.

Citation Download Citation

Witold Rzodkiewicz and Henryk M. Przewlocki "Effects of stress annealing on the index of refraction of SiO₂ layers in MOS devices", Proc. SPIE 5064, Lightmetry 2002: Metrology and Testing Techniques Using Light, (1 April 2003); https://doi.org/10.1117/12.501538

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